| PART |
Description |
Maker |
| IRF230-233 IRF231 IRF232 IRF233 MTP12N18 MTP12N20 |
N-Channel Power MOSFETs, 12A, 150-200 V 9 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
N-Channel Power MOSFETs, 12A, 150-200 V N沟道功率MOSFET，第12A50-200 V
(MTP12N18 / MTP12N20) N-Channel Power MOSFETs
N-Channel Power MOSFETs/ 12A/ 150-200 V
N-Channel Power MOSFETs 12A 150-200 V
|
http://
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| 2N8768 |
N-Channel Power MOSFETs 30 A,150 V/200 V
|
New Jersey Semi-Conductor Products, Inc.
|
| SPD4948SM SPD4942SM SPD4943SM SPD4944SM SPD4945SM |
1 AMPS 200-1000 VOLTS 150-200 nsec FAST RECOVERY RECTIFIER
|
SSDI[Solid States Devices, Inc]
|
| PU4316 PU4163 |
2 A, 150 V, 4 CHANNEL, NPN AND PNP, Si, POWER TRANSISTOR
4 A, 200 V, 4 CHANNEL, NPN, Si, POWER TRANSISTOR
|
PANASONIC CORP
|
| TDM15002D |
150 A, 200 V, SILICON, RECTIFIER DIODE
|
MICROSEMI CORP-SCOTTSDALE
|
| APT2X31D20J_05 APT2X30D20J APT2X31D20J APT2X31D20J |
Fast Recovery Epitaxial Diode; Package: ISOTOP®; IO (A): 30; VR (V): 200; trr (nsec): 21; VF (V): 1.1; Qrr (nC): 150; 30 A, 200 V, SILICON, RECTIFIER DIODE
ULTRAFAST SOFT RECOVERY RECTIFIER DIODE
|
Microsemi, Corp.
ADPOW[Advanced Power Technology]
|
| IRF9130 IRF9131 IRF9132 IRF9133 IRF9531 IRF9533 IR |
200 V, P-channel power MOSFET
P-CHANNEL POWER MOSFETS
150 V, P-channel power MOSFET
60 V, P-channel power MOSFET
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| ZXMP2120G4 ZXMP2120G4TA ZXMP2120G4TC |
200V P-CHANNEL ENHANCEMENT MODE MOSFET 200 mA, 200 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-261AA
|
Diodes Incorporated
Zetex Semiconductor PLC
|
| IRFZ30-005 IRFZ22-012 IRFZ25-012 IRF733-005PBF IRF |
30 A, 50 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET
14 A, 50 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET
16 A, 60 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET
4.5 A, 350 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET
9.2 A, 80 V, 0.27 ohm, N-CHANNEL, Si, POWER, MOSFET
28 A, 80 V, 0.077 ohm, N-CHANNEL, Si, POWER, MOSFET
2.6 A, 200 V, 2.4 ohm, N-CHANNEL, Si, POWER, MOSFET
50 A, 60 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET
10 A, 350 V, 0.55 ohm, N-CHANNEL, Si, POWER, MOSFET
3.3 A, 150 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET
5.6 A, 80 V, 0.54 ohm, N-CHANNEL, Si, POWER, MOSFET
30 A, 60 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET
13 A, 250 V, 0.34 ohm, N-CHANNEL, Si, POWER, MOSFET
18 A, 200 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET
4.4 A, 250 V, 1.1 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Bourns, Inc.
Molex, Inc.
VISHAY INTERTECHNOLOGY INC
|
| APT20M38SVFR APT20M38BVFRG APT20M38BVFR06 APT20M38 |
Power FREDFET; Package: D3 [S]; ID (A): 67; RDS(on) (Ohms): 0.038; BVDSS (V): 200; 67 A, 200 V, 0.038 ohm, N-CHANNEL, Si, POWER, MOSFET
Power FREDFET; Package: TO-247 [B]; ID (A): 67; RDS(on) (Ohms): 0.038; BVDSS (V): 200; 67 A, 200 V, 0.038 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
Microsemi, Corp.
ADPOW[Advanced Power Technology]
|
| SUM27N20-78 |
N-Channel 200-V (D-S) 175C MOSFET
From old datasheet system
N-Channel 200-V (D-S) 175C MOSFET
|
VISAY[Vishay Siliconix]
|
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